CORRELATION OF ANISOTROPIC STRAIN RELAXATION WITH SUBSTRATE MISORIENTATION DIRECTION AT INGAAS/GAAS(001) INTERFACES
CORRELATION OF ANISOTROPIC STRAIN RELAXATION WITH SUBSTRATE MISORIENTATION DIRECTION AT INGAAS/GAAS(001) INTERFACES
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DOI：
10.1063/1.115439
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发表时间：
1995-07-17
影响因子：
4
通讯作者：
KAVANAGH, KL
中科院分区：
文献类型：
--
作者：
GOLDMAN, RS;WIEDER, HH;KAVANAGH, KL
我们研究了分子束外延生长的InxGa1-x，As的(111)A，(111)B和(011)晶面取向偏差对应变弛豫不对称性的影响。对于在二维生长条件下生长的外延层，我们发现体应变松弛和外延层围绕面内轴线(外延层倾斜)旋转的各向异性与(111)A择优取向的程度成正比。(111)A错取向衬底的残余应变不对称性最大(50%)，(111)B错取向衬底的残余应变不对称性最小(
We have investigated the effects of substrate misorientation towards (111)A, (111)B, and (011) on asymmetries in the strain relaxation of InxGa1-x,As, grown on (001) GaAs substrates by molecular beam epitaxy. For epilayers grown under conditions of two-dimensional growth, we find large anisotropies in bulk strain relaxation and epilayer rotation about an in-plane axis (epilayer tilt) in proportion to the degree of (111)A misorientation. The residual strain asymmetry is largest for the (111)A misoriented substrate (>50%) and smallest for the (111)B misoriented substrate (