Feedback write scheme for memristive switching devices
Feedback write scheme for memristive switching devices
复制标题
忆阻开关器件的反馈写入方案
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
R. S. Williams
中科院分区：
文献类型：
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作者：
W. Yi;F. Perner;Muhammad Shakeel Qureshi;H. Abdalla;M. Pickett;J. Yang;Min;G. Medeiros;R. S. Williams
在纳米级候选开关设备中，电阻值和设备操作的其他相关参数的统计分布通常显示出对数正态分布，从而导致每个切换事件后的磁性模拟状态变量的大波动，这可能是数字非挥发性非挥发性内存应用程序的问题。该设备中的状态变量已被认为是沿薄膜的厚度的未凝聚的半导体区域的长度，该薄膜的厚度充当电子传输的隧道屏障。电离掺杂剂（例如氧气空位）与扫描隧道显微镜（STM）进行类比，提出了使用电流反馈的闭环写入方案以控制的方式切换磁场设备。双极性备忘设备的设计和模拟。循环写入方案导致状态变量的统计分布缩小。
In nanoscale memristive switching devices, the statistical distribution of resistance values and other relevant parameters for device operation often exhibits a lognormal distribution, causing large fluctuations of memristive analog state variables after each switching event, which may be problematic for digital nonvolatile memory applications. The state variable w in such devices has been proposed to be the length of an undoped semiconductor region along the thickness of the thin film that acts as a tunnel barrier for electronic transport across it. The dynamical behavior of w is governed by the drift diffusion of ionized dopants such as oxygen vacancies. Making an analogy to scanning tunneling microscopes (STM), a closed-loop write scheme using current feedback is proposed to switch the memristive devices in a controlled manner. An integrated closed-loop current driver circuit for switching a bipolar memristive device is designed and simulated. The estimated upper limit of the feedback loop bandwidth is in the order of 100 MHz. We applied a SPICE model built upon the TiO2 memristive switching dynamics to simulate the single-device write operation and found the closed-loop write scheme caused a narrowing of the statistical distribution of the state variable w.