Electrical activity and structural evolution correlations in laser and thermally annealed As‐implanted Si specimens
Electrical activity and structural evolution correlations in laser and thermally annealed As‐implanted Si specimens
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DOI：
10.1063/1.345527
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发表时间：
1990-03
影响因子：
3.2
通讯作者：
A. Parisini;A. Bourret;A. Armigliato;M. Servidori;S. Solmi;R. Fabbri;J. Regnard;J. Allain
中科院分区：
文献类型：
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作者：
A. Parisini;A. Bourret;A. Armigliato;M. Servidori;S. Solmi;R. Fabbri;J. Regnard;J. Allain
激光退火和进一步热退火的砷注入硅样品已在 1×1016 至 5×1016 As/cm2 的剂量范围内进行了研究，采用了不同的实验技术：电测量、透射电子显微镜 (TEM)、双晶 X 射线衍射 (DCD) 和扩展 X 射线吸收精细结构分析 (EXAFS)。在 As 激光退火样品上，在所检测的整个剂量范围内，DCD 证明了掺杂层的晶格收缩，而在相同的样品上，EXAFS 测量显示替代 As 原子周围存在局部膨胀。正如文献中最近提出的那样，应变和载流子浓度之间的关系已被发现近似线性，并且可以通过尺寸和电子效应的存在来描述。前一个效应代表原子尺寸的贡献，而后者是由于掺杂导致导带最小值变化引起的应变。经过一...
Laser‐annealed and further thermally annealed arsenic implanted silicon specimens have been investigated in a range of doses from 1×1016 to 5×1016 As/cm2, with different experimental techniques: electrical measurements, transmission electron microscopy (TEM), double‐crystal x‐ray diffractometry (DCD), and extended x‐ray absorption fine structure analysis (EXAFS). On the as laser‐annealed samples, in the whole range of doses examined, a lattice contraction of the doped layer has been evidenced by DCD, whereas, on the same specimens, EXAFS measurements have shown the presence of a local expansion around substitutional As atoms. The relationship between strain and carrier concentration has been found to be approximately linear and can be described by the presence of a size and an electronic effect, as recently proposed in the literature. The former effect represents the atomic size contribution, while the latter is the strain induced by the variation of the conduction‐band minima due to the doping. After a s...