Design of near lattice-matched AlGaInN-barriers for highly-scalable GaN-based transistor structures
Design of near lattice-matched AlGaInN-barriers for highly-scalable GaN-based transistor structures
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用于高度可扩展的 GaN 基晶体管结构的近晶格匹配 AlGaInN 势垒设计
DOI：
10.1002/pssc.200983530
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
O. Ambacher
中科院分区：
文献类型：
--
作者：
T. Lim;R. Aidam;L. Kirste;P. Waltereit;S. Müller;O. Ambacher
AlGaInN层的成分接近晶格匹配的GaN已通过分子束外延生长。X射线衍射和原子力显微镜显示单相四元层与光滑的形态。具有薄的几乎无应变的AlGaInN势垒的异质结构表现出高的片状电子密度和迁移率，分别高达2.1×1013 cm-2和1240 cm 2/Vs。该结构的外延设计包括多层间隔物，与单个AlN中间层相比，该多层间隔物能够实现沟道和势垒之间更宽的分离，并且在生长期间用作保护。一系列具有不同组成的阻挡层的晶片显示，考虑到四元氮化物的可结晶性，电子迁移率随着AlGaInN中Ga含量的增加而增加。（© 2010 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
AlGaInN layers at compositions near lattice-matched to GaN have been grown by molecular beam epitaxy. X-ray diffraction and atomic force microscopy show single-phase quaternary layers with smooth morphology. Heterostructures with thin nearly strain-free AlGaInN-barriers exhibit high values for sheet electron density and mobility ranging up to 2.1×1013 cm-2 and 1240 cm2/Vs, respectively. The epitaxial design of the structures comprises a multi-layer spacer which enables a wider separation between channel and barrier compared to a single AlN interlayer and serves as a protection during growth. A series of wafers with varied composition in the barrier reveals that the electron mobility increases with Ga-content in AlGaInN as expected considering the miscibility of quaternary nitrides. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)