Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy
Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy
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DOI：
10.1063/1.5134558
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发表时间：
2020-02
影响因子：
3.2
通讯作者：
Jan K. Prüßing;Tim Böckendorf;G. Hamdana;E. Peiner;H. Bracht
中科院分区：
文献类型：
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作者：
Jan K. Prüßing;Tim Böckendorf;G. Hamdana;E. Peiner;H. Bracht
采用扫描扩展电阻显微镜（SSRM）对掺硼（B）的体硅和纳米硅样品进行了研究。进行有限元模拟以基于化学B分布的二次离子质谱数据计算预期的电阻分布。实验和模拟电阻扫描之间的差异一致描述的电活性掺杂剂与缺陷态的相互作用。这些状态与SSRM分析之前应用的横截面样品制备密切相关。而B掺杂的体样品仅揭示制备诱导的体和表面缺陷，B掺杂的Si柱的SSRM扫描另外受到柱的外壳处的界面缺陷的影响。这些界面缺陷不仅影响Si柱中的带电载流子浓度，而且还可能影响纳米结构Si中的掺杂剂扩散。
Scanning spreading resistance microscopy (SSRM) was applied on boron (B) doped bulk and nanostructured silicon (Si) samples. Finite element simulations are performed to calculate the expected resistance profile based on secondary ion mass spectrometry data of the chemical B profile. Differences between experimental and simulated resistance scans are consistently described by the interaction of electrically active dopants with defect states. These states are strongly correlated to the cross-sectional sample preparation applied before the SSRM analysis. Whereas the B-doped bulk sample only reveals preparation induced bulk and surface defects, the SSRM scan of B-doped Si pillars is additionally affected by interface defects at the outer shell of the pillar. These interface defects do not only affect the concentration of charged carriers in the Si pillar but could also influence dopant diffusion in nanostructured Si.