Continuous-wave room-temperature operation of a 2.8 μm GaSb-based semiconductor disk laser.
Continuous-wave room-temperature operation of a 2.8 μm GaSb-based semiconductor disk laser.
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2.8 μm GaSb 基半导体盘激光器的连续波室温操作。
DOI：
10.1364/ol.36.000319
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发表时间：
2011
期刊：
影响因子：
3.6
通讯作者：
J. Wagner
中科院分区：
文献类型：
--
作者：
B. Rösener;M. Rattunde;R. Moser;S. Kaspar;Tino Töpper;C. Manz;K. Köhler;J. Wagner
报道了一种基于(AlGaIn)(AsSb)材料体系的光泵浦半导体圆盘激光器，其发射波长为2.8μm，在连续运转时获得了高达12 0 mW的输出功率，在脉冲模式下获得了大于5 0 mW的输出功率。与基于相同材料体系的较短波长半导体圆盘激光器进行了比较，讨论了该激光器的性能。
We demonstrate an optically pumped semiconductor disk laser based on the (AlGaIn)(AsSb) material system, which operates at an emission wavelength of 2.8 μm. Up to 120 mW of output power were obtained in cw operation and more than 500 mW in pulsed mode. The performance of the present laser is discussed in comparison to shorter-wavelength semiconductor disk lasers based on the same materials system.