The effect of nitrogen on the chemistry of sputter-deposited SiCxNy films
The effect of nitrogen on the chemistry of sputter-deposited SiCxNy films
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DOI：
10.1016/s0169-4332(01)00588-8
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发表时间：
2001-11
影响因子：
6.7
通讯作者：
Z. Alizadeh;K. Sundaram;S. Seal
中科院分区：
文献类型：
--
作者：
Z. Alizadeh;K. Sundaram;S. Seal
碳化硅氮化物（SiCxNy）的薄膜在r.f.使用SiC靶的磁控溅射系统。通过改变溅射环境中氩气和氮气的比例来沉积不同组成的膜。X射线光电子能谱和原子力显微镜的沉积膜的研究表明，化学状态以及表面粗糙度是高度敏感的氮比在溅射过程中。
Thin films of silicon carbide nitride (SiCxNy) were deposited in an r.f. magnetron sputtering system using a SiC target. Films of different compositions were deposited by varying the ratios of argon and nitrogen in the sputtering ambient. X-ray photoelectron spectroscopy and atomic force microscopy studies on the deposited films indicated that the chemical states as well as the surface roughness are highly sensitive to the nitrogen ratios during sputtering.