Thermophysical properties of SnO_2-based transparent conductive films: Effect of dopant species and structure compared with In_2O_3-, ZnO-, and TiO_2-based films
Thermophysical properties of SnO_2-based transparent conductive films: Effect of dopant species and structure compared with In_2O_3-, ZnO-, and TiO_2-based films
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SnO_2基透明导电薄膜的热物理性质：与In_2O_3、ZnO和TiO_2基薄膜相比，掺杂剂种类和结构的影响
DOI：
10.1557/jmr.2014.191
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发表时间：
2014
影响因子：
2.7
通讯作者：
Y. Shigesato
中科院分区：
文献类型：
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作者：
Nobuto Oka;S. Yamada;T. Yagi;N. Taketoshi;J. Jia;Y. Shigesato
我们研究了掺杂剂种类和结构对Sb掺杂SnO_2 (ATO)和Ta掺杂SnO_2 (TTO)薄膜热导率的影响，并将结果与In_2O_3、ZnO和TiO_2基透明导电薄膜的结果进行了比较。多晶ATO和TTO薄膜的热导率（λ）分别为4.4-4.9和4.7 W m^−1 K^−1。两种掺杂剂（Sb 和 Ta）的声子热导率 (λ_ph) 几乎相同：Sb 和 Ta 的平均热导率分别为 4.3 和 4.5 W m^−1 K^−1。 λ_ph 的这些结果大于 Sn 掺杂的 In_2O_3 薄膜的结果 (3.8 W m^−1 K^−1)，并且远大于非晶 ATO 薄膜的结果 (1.0 W m^−1 K^−1)。这些事实使我们得出结论，基体材料种类（SnO_2 或 In_2O_3）和结构（多晶或非晶）对 ATO 和 TTO 热物理性质的影响远大于掺杂剂种类。
We investigate the effect of dopant species and structure on the thermal conductivity of Sb-doped SnO_2 (ATO) and Ta-doped SnO_2 (TTO) films and compare the results with those of In_2O_3-, ZnO-, and TiO_2-based transparent conductive films. The thermal conductivities (λ) of polycrystalline ATO and TTO films are 4.4–4.9 and 4.7 W m^−1 K^−1, respectively. The thermal conductivities via phonons (λ_ph) are almost identical for both dopant species (Sb and Ta): 4.3 and 4.5 W m^−1 K^−1 for Sb and Ta, respectively, on average. These results for λ_ph are larger than that for Sn-doped In_2O_3 films (3.8 W m^−1 K^−1) and considerably larger than that for amorphous ATO films (1.0 W m^−1 K^−1). These facts lead us to conclude that the base-material species (SnO_2 or In_2O_3) and structure (polycrystalline or amorphous) affect the thermophysical properties of ATO and TTO much more than the dopant species.
通过拉曼带的波数-温度关系对有机发光二极管中的有机层进行非接触式温度测量
DOI：
--
发表时间：
2008
期刊：
Jpn. J Appl. Phys. 47
影响因子：
--
作者：
T.Seki;M.Onaka;T. Sugiyama
通讯作者：
T. Sugiyama