Electron-spin phase relaxation of phosphorus donors in nuclear-spin-enriched silicon
Electron-spin phase relaxation of phosphorus donors in nuclear-spin-enriched silicon
复制标题
DOI：
10.1103/physrevb.70.033204
复制
发表时间：
2004-07-01
影响因子：
3.7
通讯作者：
Yamasaki, S
中科院分区：
文献类型：
--
作者：
Abe, E;Itoh, KM;Yamasaki, S
我们报告了一个脉冲电子顺磁共振相位弛豫的同位素纯化的Si-29和天然丰度Si（Si-nat）单晶中的磷施主绑定的电子自旋的研究在8 K测量。两种样品的双脉冲回波衰减曲线均呈现二次时间依赖关系，Si-29的电子相位弛豫时间T-M比Si-nat的电子相位弛豫时间T-M短一个数量级。T-M的取向依赖性表明，相位弛豫是由主核自旋的触发器引起的谱扩散引起的。从频域分析了Si-29中的电子自旋回波包络调制效应。
We report a pulsed electron paramagnetic resonance study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified Si-29 and natural abundance Si (Si-nat) single crystals measured at 8 K. The two-pulse echo decay curves for both samples show quadratic dependence on time, and the electron phase relaxation time T-M for Si-29 is about an order of magnitude shorter than that for Si-nat. The orientation dependence of T-M demonstrates that the phase relaxation is caused by spectral diffusion due to flip-flops of the host nuclear spins. The electron spin echo envelope modulation effects in Si-29 are analyzed in the frequency domain.