Electrical and optical properties of defects in silicon introduced by high-temperature electron irradiation.
Electrical and optical properties of defects in silicon introduced by high-temperature electron irradiation.
复制标题
高温电子辐照在硅中引入的缺陷的电学和光学性质。
DOI：
10.1103/physrevb.38.3395
复制
发表时间：
1988
期刊：
影响因子：
--
通讯作者：
Sun
中科院分区：
文献类型：
--
作者：
Xu;Lu;Sun
在高温下，2-MeV的Si电子辐照除了产生氧空位外，还产生了一个能量为E/sub c/-0.36 eV的优势深能级。这一水平在室温辐照的Si中不太显著，在目前的情况下被发现是一个有效的复合中心。用深能级光谱学测量的这一能级的光学截面显示了一个叠加在主跃迁上的精细结构。这种精细结构被认为与上述缺陷耦合的一种新的谐振声子模式有关。等时退火行为表明该缺陷可能是一种空位-氧配合物。在假设V/sub - 2/-O/sub - 2/复杂结构的情况下，基于晶格动力学格林函数方法的计算表明存在能量为10 meV的缺陷诱导共振声子模式，这与实验观察结果很好地吻合。
2-MeV electron irradiation of Si at elevated temperature creates a dominant deep level at the energy E/sub c/-0.36 eV in addition to the oxygen vacancies. This level, which is less significant in room-temperature-irradiated Si, is found to be an efficient recombination center in the present situation. The optical cross section of this level measured by deep-level optical spectroscopy reveals a fine structure superimposed on the main transition. This fine structure is considered to be related to a new resonant phonon mode coupled with the above defect. The isochronal annealing behavior shows that this defect might be a kind of vacancy-oxygen complex. With the assumption of a V/sub 2/-O/sub 2/ complex structure, a calculation based on the Green's-function method of lattice dynamics indicates the existence of a defect-induced resonant phonon mode with energy of 10 meV, which is in good agreement with the experimental observation.