Enhanced phosphorescence in N contained Ba2SiO4:Eu2+ for X-ray and cathode ray tubes
Enhanced phosphorescence in N contained Ba2SiO4:Eu2+ for X-ray and cathode ray tubes
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DOI：
10.1016/j.optmat.2010.02.027
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发表时间：
2010-07
影响因子：
3.9
通讯作者：
Meiyuan Wang;Xia Zhang;Z. Hao;X. Ren;Yongshi Luo;Xiaojun Wang;Jiahua Zhang
中科院分区：
文献类型：
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作者：
Meiyuan Wang;Xia Zhang;Z. Hao;X. Ren;Yongshi Luo;Xiaojun Wang;Jiahua Zhang
一种用于X射线管和阴极射线管的含氮Ba 2 SiO 4：Eu 2+的蓝绿色长余辉磷光体，其化学成分式为Ba 2 SiO 4：0.01 Eu 2 +-xSi 3 N 4 - 2BaCO 3（x=0.1 - 1.0），通过常规高温固相法制备。研究了Si 3 N4含量和温度对磷光和荧光性质的影响。发射光谱为单一宽带，峰位于505 nm，属于Eu 2+的4f 65 d1 → 4f 7跃迁。热释光（TL）曲线表明，不含N的Ba_2SiO_4：0.01Eu ~（2+）样品在417 K处有一个高温发光峰。随着Si_3N_4含量的增加，磷光呈超线性增长，并在400、355、365和335 K附近出现新的热释光峰。这些峰归因于与N取代O有关的新陷阱的形成。
A bluish-green color long-lasting phosphorescent phosphor of N contained Ba2SiO4:Eu2+for X-ray and cathode ray tubes are prepared with the chemical component formula Ba2SiO4:0.01Eu2+−xSi3N4−2BaCO3(x=0.1 to 1.0) by the conventional high-temperature solid-state method. The phosphorescence and fluorescence properties as a function of Si3N4content and temperature are investigated. The emission spectra show a single broad band peaking at 505nm, which are ascribed to the 4f65d1→4f7transition of Eu2+. Thermoluminescence (TL) glow-curves show that Ba2SiO4:0.01Eu2+without N holds a high-temperature peak at 417K. With increasing the content of Si3N4, the phosphorescence grows super-linearly and some new TL peaks appear at low temperatures of about 400, 355, 365, and 335K. These peaks are ascribed to the formation of new traps related to N substitution for O.