Spin states in InAs/AlSb/GaSb semiconductor quantum wells
Spin states in InAs/AlSb/GaSb semiconductor quantum wells
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InAs/AlSb/GaSb 半导体量子阱中的自旋态
DOI：
10.1103/physrevb.80.035303
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发表时间：
2008-12
影响因子：
3.7
通讯作者：
常凯
中科院分区：
文献类型：
--
作者：
常凯
我们通过自洽求解凯恩模型和泊松方程，从理论上研究了 InAs/AlSb/GaSb 断隙量子阱中的自旋态。由于电子空穴杂化，InAs/AlSb/GaSb 量子阱中的自旋态与单能带 Rashba 模型获得的自旋态有很大不同。最低传导子带的拉什巴自旋分裂表现出振荡行为。随着费米波矢的增加，D'yakonov-Perel'自旋弛豫时间显示出几个峰值。通过在 InAs 和 GaSb 层之间插入 AlSb 势垒，可以大大减少杂化。因此，可以通过改变 AlSb 势垒的厚度来显着调整自旋取向、自旋分裂和 D'yakonov-Perel' 自旋弛豫时间。
We investigate theoretically the spin states in InAs/AlSb/GaSb broken-gap quantum wells by solving the Kane model and the Poisson equation self-consistently. The spin states in InAs/AlSb/GaSb quantum wells are quite different from those obtained by the single-band Rashba model due to the electron-hole hybridization. The Rashba spin splitting of the lowest conduction subband shows an oscillating behavior. The D'yakonov-Perel' spin-relaxation time shows several peaks with increasing the Fermi wave vector. By inserting an AlSb barrier between the InAs and GaSb layers, the hybridization can be greatly reduced. Consequently, the spin orientation, the spin splitting, and the D'yakonov-Perel' spin-relaxation time can be tuned significantly by changing the thickness of the AlSb barrier.