Determination of dopant position of thermoelectric material B-doped Mg2Si by white neutron holography
Determination of dopant position of thermoelectric material B-doped Mg2Si by white neutron holography
复制标题
白中子全息法测定硼掺杂Mg2Si热电材料的掺杂位置
DOI:
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发表时间:
2019
期刊:
影响因子:
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通讯作者:
Y. Miyazaki
中科院分区:
文献类型:
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作者:
K. Sugimoto;S. Uechi;Y. Kanazawa;Y. Fukumoto;T. Yamamoto;K. Ohoyama;K. Hayashi;N. Happo;M. Harada;K. Oikawa;Y. Inamura;K. Hayashi;W. Saito;Y. Miyazaki