Creation of Highly Oriented Freestanding Carbon Nanotube Film by Sublimating Decomposition of Silicon Carbide Film
Creation of Highly Oriented Freestanding Carbon Nanotube Film by Sublimating Decomposition of Silicon Carbide Film
复制标题
碳化硅薄膜升华分解制备高取向自支撑碳纳米管薄膜
DOI：
10.1143/jjap.39.l1057
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
N. Shibata
中科院分区：
文献类型：
--
作者：
Toshiki Shimizu;Y. Ishikawa;M. Kusunoki;T. Nagano;N. Shibata
采用化学气相沉积法，在SiH_2Cl2和C_2H_2交替供气的条件下，在薄的绝缘体上生长碳化硅薄膜，通过升华分解制备了自支撑的碳纳米管薄膜。碳化硅的升华分解是在1600℃的真空(1×10-2Pa)中进行的。碳纳米管垂直于单晶碳化硅(111)薄膜高度取向。
Freestanding carbon nanotube films were created by sublimating decomposition of silicon carbide films, which were grown on thin silicon-on-insulator (SOI) substrates by chemical vapor deposition with alternating gas supply of SiH2Cl2 and C2H2. The sublimating decomposition of silicon carbide is performed by annealing the SiC film at 1600°C in vacuum (1×10-2 Pa). The carbon nanotubes were highly oriented perpendicular to the single-crystal SiC(111) film.