An Ultrahigh‐Rectification‐Ratio WSe2 Homojunction Defined by High‐Efficiency Charge Trapping Effect
An Ultrahigh‐Rectification‐Ratio WSe2 Homojunction Defined by High‐Efficiency Charge Trapping Effect
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DOI：
10.1002/aelm.202300523
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发表时间：
2023-11
影响因子：
6.2
通讯作者：
Lihua Wang;Xiaoyu He;Xiankun Zhang;Xiaofu Wei;Kuanglei Chen;L. Gao;Huihui Yu;Mengyu Hong-
中科院分区：
文献类型：
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作者：
Lihua Wang;Xiaoyu He;Xiankun Zhang;Xiaofu Wei;Kuanglei Chen;L. Gao;Huihui Yu;Mengyu Hong-
尽管二维材料范德华异质结构（vdWH）表现出许多新颖的性能和应用，但二维同质结在界面晶格匹配、能带连续性和电荷转移效率方面具有独特的优势。然而，二维同质结二极管的整流性能受到小结势垒的严重限制，这主要是由于低效的电荷掺杂。在这项工作中，报道了一种通过半浮栅掺杂氧化石墨二炔（GDYO）实现的超高整流比 WSe2 同质结二极管。利用WSe2/GDYO直接电荷捕获模式可以消除传统绝缘势垒对电荷捕获效率的抑制，从而提高整流比。 GDYO层中的C─C(sp)和含氧官能团由于其不饱和度而可以提供出色的电荷捕获能力。此外，用于将石墨二炔（GDY）氧化成GDYO的氧等离子体处理可以使GDYO具有更平坦的表面，从而形成强耦合的WSe2/GDYO界面，从而提高电荷转移效率并增强静电掺杂效果。此外，WSe2/GDYO 界面被证实比 WSe2/GDY 界面具有更高的结势垒。这项研究提出了一种通过电荷捕获构建p-n结的全新方法，并获得了创纪录的最高整流比高达106的同质结二极管。
Although 2D material van der Waals heterostructures (vdWHs) exhibit many novel properties and applications, 2D homojunctions have unique advantages in interface lattice matching, band continuity, and charge transfer efficiency. However, the rectification performances of 2D homojunction diodes are severely limited by the small junction barrier, mainly due to inefficient charge doping. In this work, an ultrahigh‐rectification‐ratio WSe2 homojunction diode achieved by the semi‐floating gate doping of graphdiyne oxide (GDYO) is reported. Utilizing the WSe2/GDYO direct charge trapping mode can free the inhibition of charge capturing efficiency by removing conventional insulating barriers and thus improve the rectification ratio. The C─C(sp) and oxygen‐containing functional groups in the GDYO layer can provide outstanding charge‐trapping ability due to their unsaturation. Furthermore, the oxygen plasma treatment used for oxidizing graphdiyne (GDY) into GDYO can make GDYO a flatter surface, thus creating strong‐coupling WSe2/GDYO interfaces to improve the charge transfer efficiency and enhance the electrostatic doping effect. Besides, the WSe2/GDYO interfaces are confirmed to possess a higher junction barrier than that of the WSe2/GDY interfaces. This research proposes a brand‐new approach to building p–n junctions via charge trapping and the homojunction diode with a record‐highest rectification ratio of up to 106 is obtained.