Multi-valued static random access memory (SRAM) cell with single-electron and MOSFET hybrid circuit
Multi-valued static random access memory (SRAM) cell with single-electron and MOSFET hybrid circuit
复制标题
具有单电子和 MOSFET 混合电路的多值静态随机存取存储器 (SRAM) 单元
DOI：
10.1049/el:20053134
复制
发表时间：
2005
影响因子：
1.1
通讯作者：
J. Choi
中科院分区：
文献类型：
--
作者：
Y. Yu;H. Kye;B. Song;S. Kim;J. Choi
提出了一个由单电子（SE）和MOSFET组成的混合电路的新的多值静态访问存储器（MVSRAM）单元。先前报道的带有SE-MOSFET混合电路的MVSRAM需要两条数据线，一条用于写操作的位线以及一条用于读取操作的感官线，以提高读取操作的速度，但是所提出的单元只有一个数据线对于读/写操作，导致的存储区域比以前的单元格小得多，而不会降低读出速度。
A new multi-valued static random access memory (MVSRAM) cell with a hybrid circuit consisting of a single-electron (SE) and MOSFETs is proposed. The previously reported MVSRAM with an SE-MOSFET hybrid circuit needs two data lines, one bit line for write operations and one sense line for read operations, to improve the speed of the read-out operation, but the proposed cell has only one data line for read/write operations, resulting in a memory area that is much smaller than that of the previous cell, without any reduction of read-out speed.