III-V Light-Emitting Diodes on Silicon by Hydrogel-Mediated Wafer Bonding
III-V Light-Emitting Diodes on Silicon by Hydrogel-Mediated Wafer Bonding
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DOI：
10.1149/2162-8777/abb794
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发表时间：
2020-01-09
影响因子：
2.2
通讯作者：
Tanabe, Katsuaki
中科院分区：
文献类型：
--
作者：
Nishigaya, Kosuke;Tanabe, Katsuaki
III - V族化合物半导体光源组件的单片芯片集成，特别是在硅平台上的集成，被认为是现代光电子学中的一项关键技术。水凝胶介导的半导体晶圆键合是一种用于异质材料集成的新兴技术，它能同时形成具有高机械稳定性、导电性、光学透明性和表面粗糙度耐受性的界面[K. 岸部和K. 田边，《应用物理快报》，115卷，081601期（2019年）]。到目前为止，其实验演示仅限于同质的硅/硅键合以及在太阳能电池器件中的应用。在此，我们通过异质的砷化镓/硅水凝胶介导的晶圆键合，展示了在硅上制造和运行III - V族发光二极管的过程。键合过程在室温下的环境空气中进行，因此在器件生产中可能具有显著的成本和产量优势。由于水凝胶的可变形性，实现了与具有微米级粗糙度的半导体晶圆未抛光背面的键合。测量发现，在硅上键合器件的发光特性与未键合的参考器件相当。展示了该器件在超过70摄氏度的温度下稳定运行超过100小时。我们的实验结果验证了水凝胶介导的半导体键合方案对于光电器件应用的进一步适用性。
Monolithic on-chip integration of III-V compound semiconductor light-source components particularly on Si platforms is thought to be an important key technology in modern optoelectronics. Hydrogel-mediated semiconductor wafer bonding is an emerging technique for heterogeneous materials integration, simultaneously forming interfaces with high mechanical stability, electrical conductivity, optical transparency, and surface-roughness tolerance [K. Kishibe and K. Tanabe,Appl. Phys. Lett.,115, 081601 (2019)]. So far, its experimental demonstration has been limited to homogeneous Si/Si bonding and an application of solar-cell device. Here we demonstrate the fabrication and operation of a III-V light-emitting diode on Si, via heterogeneous GaAs/Si hydrogel-mediated wafer bonding. The bonding process is carried out in ambient air at room temperature, and therefore can potentially provide significant cost and throughput advantages in device production. Bonding with an unpolished back surface of semiconductor wafer with a micrometer-scale roughness is realized thanks to the deformability of hydrogel. The luminescence characteristics of the bonded device on Si are measured comparable to an unbonded reference. Stable operations of the device at over 70 degrees C and for over 100 h are demonstrated. Our experimental results verify the further suitability of the hydrogel-mediated semiconductor bonding scheme for optoelectronic device applications.