Direct Growth of Ultrathin NiCo2O4/NiO Nanosheets on SiC Nanowires as a Free-Standing Advanced Electrode for High-Performance Asymmetric Supercapacitors
Direct Growth of Ultrathin NiCo2O4/NiO Nanosheets on SiC Nanowires as a Free-Standing Advanced Electrode for High-Performance Asymmetric Supercapacitors
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DOI：
10.1021/acssuschemeng.6b00697
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发表时间：
2016-06
影响因子：
8.4
通讯作者：
Jian Zhao;Zhenjiang Li;Meng Zhang;A. Meng;Qingdang Li
中科院分区：
文献类型：
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作者：
Jian Zhao;Zhenjiang Li;Meng Zhang;A. Meng;Qingdang Li
本论文采用直接沉积在碳布（CC）上的SiC纳米线（SiC NWs）作为支架材料，首先在碳布上生长出疏松的SiC纳米线，多孔NiCo 2 O 4/NiO纳米片（NiCo 2 O 4/NiO NSs），制备了一种用于非对称超级电容器（ASC）的自支撑、稳定的复合电极。得益于SiC纳米线和NiCo 2 O 4/NiO纳米线的巧妙组合，说明了一种有前途的协同策略，该电极在1 mA cm-2下的比容量为1801 F g-1，在10 mA cm-2下的倍率性能为1499 F g-1。此外，以无添加剂的功能化SiC纳米丝@NiCo2O4/NiO纳米丝为正极，与活性炭/泡沫镍负极组装，制备出具有良好电化学性能的新型活性炭。
In this paper, we successfully employed SiC nanowires (SiC NWs) with splendid anticorrosion, antioxidation, heat-resistant properties, excellent conductivity, and large specific surface area directly deposited on carbon cloth (CC) as scaffolds to grow first the loose, porous and ultrathin NiCo2O4/NiO nanosheets (NiCo2O4/NiO NSs) via a facile hydrothermal technology coupled with annealing treatment to form a free-standing and stable hybrid electrode for asymmetric supercapacitor (ASC). Benefiting from the smart combination of SiC NWs and NiCo2O4/NiO NSs, illustrating a promising synergistic strategy, the electrode delivered an ultrahigh specific capacitance of 1801 F g–1 at 1 mA cm–2 as well as a remarkable rate capability of 1499 F g–1 at 10 mA cm–2. Furthermore, the additive-free functionalized SiC NWs@NiCo2O4/NiO NSs on CC acted as the positive electrode, assembled with the activated carbon (AC) on nickel foam (NF) negative electrode to fabricate an advanced ASC with intriguing electrochemical performan...