Electrical and photovoltaic properties of Cu-doped p-GaSe/n-InSe heterojunction
Electrical and photovoltaic properties of Cu-doped p-GaSe/n-InSe heterojunction
复制标题
Cu掺杂p-GaSe/n-InSe异质结的电学和光伏性能
DOI：
10.1063/1.373849
复制
发表时间：
2000
影响因子：
3.2
通讯作者：
T. Ikari
中科院分区：
文献类型：
--
作者：
S. Shigetomi;T. Ikari
将未掺杂的n-InSe的解理面与掺铜的p-Gase直接接触，形成了GaS(Cu)/InSe异质结。通过测量电容-电压、电流-电压和短路电流的光谱响应，研究了薄膜的传输和光传输特性。此外，还利用开路电压和短路电流估算了照明下的效率参数。并与未掺杂p-Gase和n-InSe制备的GaS(Un)/InSe异质结的这些特性进行了比较。发现了Gase(Cu)/InSe异质结的串联电阻，其值比相应的Gase(Un)/InSe异质结低约103倍。在120 mW/cm2的卤素灯照射下，GaE(Cu)/InSe异质结的短路电流密度为9.0 mA/cm2，开路电压为0.42V。GaS(Cu)/InSe异质结的短路电流约为一个数量级。
GaSe(Cu)/InSe heterojunctions have been formed by bringing the cleavage surface of undoped n-InSe and Cu-doped p-GaSe into direct contact. Transport and phototransport properties are studied by the measurements of capacitance–voltage, current–voltage, and the spectral response of short-circuit current. Moreover, the efficiency parameters under illumination are estimated by using the open-circuit voltage and short-circuit current. These characteristics of GaSe(Cu)/InSe heterojunctions are compared with those of GaSe(Un)/InSe heterojunctions fabricated by undoped p-GaSe and n-InSe. The series resistance of GaSe(Cu)/InSe heterojunctions is found, the value of which is about 103 times lower than the corresponding value of GaSe(Un)/InSe heterojunctions. A short-circuit current density of 9.0 mA/cm2 and an open-circuit voltage of 0.42 V on GaSe(Cu)/InSe heterojunctions are obtained under illumination of 120 mW/cm2 of a halogen lamp. The short-circuit current of GaSe(Cu)/InSe heterojunctions is about one order o...