Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters

Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters
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DOI：
10.1109/55.6938
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发表时间：
1988
期刊：
IEEE Electron Device Letters
影响因子：
4.9
通讯作者：
G. Ng;W. Hong;D. Pavlidis;M. Tutt;P. Bhattacharya
G. Ng;W. Hong;D. Pavlidis;M. Tutt;P. Bhattacharya
中科院分区：
工程技术2区
文献类型：
--
作者：
G. Ng;W. Hong;D. Pavlidis;M. Tutt;P. Bhattacharya

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被引文献

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The DC and microwave performance of a strained In/sub 0/./sub 65/Ga/sub 0/./sub 35/As/In/sub 0/./sub 52/A1/sub 0/./sub 48/As HEMT (high-electron-mobility transistors) is reported. Its design is based on theoretical and experimental studies including low- and high-field transport characterization of heterostructures with different strains. The intrinsic DC transconductance and cutoff frequence of 1.4- mu m-long gate HEMTs are 574 mS/mm and 38.6 GHz, respectively. The increased indium (In) composition in the channel enhances the drift velocity from 1.35*10/sup 7/ to 1.55*10/sup 7/ cm/s at 300 K.>