Si rings, Si clusters, and Si nanocrystals—different states of ultrathin SiOx layers
Si rings, Si clusters, and Si nanocrystals—different states of ultrathin SiOx layers
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DOI：
10.1063/1.1525051
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发表时间：
2002-11
影响因子：
4
通讯作者：
L. Yi;J. Heitmann;R. Scholz;M. Zacharias
中科院分区：
文献类型：
--
作者：
L. Yi;J. Heitmann;R. Scholz;M. Zacharias
采用反应蒸发法制备了非晶SiO/SiO2超晶格。红外吸收和光致发光光谱作为退火温度的函数进行了测量。观察到三个光致发光发射带。在所制备的样品中存在以560 nm为中心的带，并且在700 °C以上退火时消失。在退火温度高于500 °C时，检测到760 nm至890 nm附近的第二个谱带。在900 °C以上的退火温度下观察到强的红色发光。不同的光致发光带的起源和不同状态的相分离的SiO2层进行了讨论。
Amorphous SiO/SiO2 superlattices were prepared by reactive evaporation of SiO powder in an oxygen atmosphere. Infrared absorption and photoluminescence spectra were measured as a function of annealing temperature. Three photoluminescence emission bands were observed. A band centered at 560 nm is present in as-prepared samples and vanishes for annealing above 700 °C. The second band around 760 nm to 890 nm is detected for annealing temperatures above 500 °C. A strong red luminescence is observed for annealing temperatures above 900 °C. The origin of the different photoluminescence bands and different states of the phase separation of ultrathin SiOx layers is discussed.