The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters
The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters
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DOI：
10.1109/icicdt.2019.8790909
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发表时间：
2019-06
期刊：
影响因子：
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通讯作者：
Miao Cui;Yutao Cai;Qinglei Bu;Wen Liu;H. Wen;I. Mitrovic;Stephen Taylor;P. Chalker;Cezhou Zhao
中科院分区：
文献类型：
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作者：
Miao Cui;Yutao Cai;Qinglei Bu;Wen Liu;H. Wen;I. Mitrovic;Stephen Taylor;P. Chalker;Cezhou Zhao
逻辑电路的大输入摆幅（> 10 V）对于充分利用GaN集成电路（IC）来匹配主流Si和SiC功率MOSFET的驱动器或保护电路至关重要。采用单片集成的E/D模式GaN MIS-HEMT器件成功实现了10 V输入DCFL逆变器，其工作温度可达250 °C。在25 °C ~ 250 °C的温度范围内，系统研究了AlGaN势垒层刻蚀深度不同的D型器件阈值电压对DCFL逆变器直流和交流性能的影响。这些结果提出了一个大的输入摆幅和一个简单的设计GaN基的逻辑电路使用E型AlGaN/GaN MIS-HEMT没有额外的驱动器或电平移位器，并提出了一个验证方法，以提供强大的免疫力，高电压过冲。
Large input swing of logic circuits (> 10 V) are essential for the full utilization of GaN integrated circuits (ICs) to match drivers or protection circuits of mainstream Si and SiC power MOSFETs. A 10 V input DCFL inverter was successfully achieved using monolithic integration of E/D-mode GaN MIS-HEMTs, which can operate at high temperatures up to 250 °C. The impact of the threshold voltage of D-mode devices using different etch depths of AlGaN barrier on the DC and AC performance of DCFL inverters is systematically studied at various temperatures from 25 °C to 250 °C. These results present a large input swing and a straightforward design of GaN-based logic circuits using E-mode AlGaN/GaN MIS-HEMTs without additional drivers or level shifters, and propose a validate method to provide strong immunity to high voltage overshoot.