Frequency band-gap measurement of two-dimensional air/silicon phononic crystals using layered slanted finger interdigital transducers
Frequency band-gap measurement of two-dimensional air/silicon phononic crystals using layered slanted finger interdigital transducers
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DOI：
10.1063/1.1893209
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发表时间：
2005-04
影响因子：
3.2
通讯作者：
Tsung-Tsong Wu;Liangliang Wu;Zi-Gui Huang
中科院分区：
文献类型：
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作者：
Tsung-Tsong Wu;Liangliang Wu;Zi-Gui Huang
在本文中，我们研究的频率带隙特性的微机械空气/硅声子带结构使用分层斜指叉指换能器（SFIT）。为了实现声子晶体在微机电系统相关器件中的应用，从理论和实验两方面研究了微米尺度声子晶体中表面波的频率带隙宽度。为了进一步整合互补金属氧化物半导体制程技术，本研究选择矽作为二维声子晶体的基底材料。为了覆盖声子晶体的频率带隙宽度，分析和讨论了测量中的宽带SFIT-和SFIT闪烁ZnO闪烁Si层状结构。对于分层结构，色散关系的计算方法是有效介电常数的方法，和分层SFIT的频率响应的耦合模式模型进行了模拟。频率带隙宽度和…
In this paper, we investigate the frequency band-gap features of micromachined air/silicon phononic band structures using layered slanted finger interdigital transducers (SFIT). In order to achieve the applications of phononic crystals on the microelectromechanical system related components, the frequency band-gap widths of surface waves are studied both theoretically and experimentally in micrometer scale phononic crystals. For further integration with the complementary metal-oxide semiconductor processing techniques, silicon is chosen as the base material of the two-dimensional phononic crystals in this study. To cover the frequency band-gap width of the phononic crystal, the wideband SFIT- and the SFIT∕ZnO∕Si-layered structures in the measurement are analyzed and discussed. For layered structures, the dispersive relation is calculated by the effective permittivity approach, and the frequency response of the layered SFIT is then simulated by the coupling-of-modes model. The frequency band-gap width and ...