Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy
Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy
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等离子增强分子束外延在富含 Ga 和 N 的条件下生长的 GaN 薄膜的特性
DOI：
10.1063/1.359474
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发表时间：
1995
影响因子：
3.2
通讯作者：
H. Morkoç
中科院分区：
文献类型：
--
作者：
A. Botchkarev;A. Salvador;B. Sverdlov;J. Myoung;H. Morkoç
在650-850 °C的衬底温度范围内，在富Ga和氮的条件下，研究了由电子回旋共振活化氮介导的GaN生长。安装在衬底和氮通量之间的生物电栅允许控制参与生长过程的氮物种。高能量离子的情况下，导致在480-650 nm的光谱范围内的光致发光信号增加的膜。在富Ga条件下，使用的Ga和N离子通量值分别为5×1014和3.5×1014 cm−2 s−1。富氮条件是通过先将氮通量增加到8×1014，然后增加到1.2×1015 cm-2 s-1来实现的。这两种类型的样品在室温下都表现出很强的带边光致发光信号，富N条件导致更好的迁移率和更低的载流子浓度。当衬底温度为750 °C时，薄膜的性能最好。
GaN growth mediated by electron cyclotron resonance activated nitrogen has been investigated under Ga and nitrogen rich conditions in a substrate temperature range of 650–850 °C. A biasable grid installed between the substrate and nitrogen flux allowed control of the nitrogen species participating in the growth process. The absence of high energetic ions resulted to films with increased photoluminescence signals in the 480–650 nm spectral range. In the Ga rich conditions, the Ga and N ion flux values used were 5×1014 and 3.5×1014 cm−2 s−1, respectively. The nitrogen rich conditions were achieved by increasing the N flux first to 8×1014 and then to 1.2×1015 cm−2 s−1. Both types of samples exhibited strong band edge photoluminescence signal at room temperature, with N rich conditions leading to better mobilities and lower carrier concentrations. The best films were obtained when the substrate temperature was 750 °C.