ENHANCEMENT-MODE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING HOMOEPITAXIAL DIAMONDS
ENHANCEMENT-MODE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING HOMOEPITAXIAL DIAMONDS
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DOI：
10.1063/1.112915
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发表时间：
1994-09-19
影响因子：
4
通讯作者：
ITO, M
中科院分区：
文献类型：
--
作者：
KAWARADA, H;AOKI, M;ITO, M
用金刚石制作了增强型金属-半导体场效应晶体管。 晶体管的操作是基于对氢终止的同质外延层的表面p型导电的控制。 硼掺杂不用于导电。 铝接触用于肖特基栅极，金欧姆接触用于源极和漏极。 使用长度为10-40 μ m的铝栅获得的厚度为20-200 μ s/mm。 当栅偏压为零时，同质外延层上的有源区足够薄以用于载流子的总耗尽。
Enhancement mode-type metal-semiconductor field effect transistors using diamond have been fabricated. The transistor operation is based on the control of surface p-type conduction of a hydrogen terminated homoepitaxial layer. Boron doping was not used for the conduction. An aluminum contact is used for the Schottky gate and gold ohmic contacts are used for the source and drain. The obtained transconductance is 20-200 mus/mm using aluminum gates of 10-40 mum in length. The active region on the homoepitaxial layer is thin enough for the total depletion of carriers when the gate bias is zero.