Magneto-elastic switching of magnetostrictive nanomagnets with in-plane anisotropy: the effect of material defects
Magneto-elastic switching of magnetostrictive nanomagnets with in-plane anisotropy: the effect of material defects
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DOI：
10.1088/1361-648x/aadb6a
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发表时间：
2018-03
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影响因子：
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通讯作者：
Md Ahsanul Abeed;J. Atulasimha;Supriyo Bandyopadhyay
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作者：
Md Ahsanul Abeed;J. Atulasimha;Supriyo Bandyopadhyay
从理论上研究了具有面内磁各向异性的椭圆磁致伸缩纳米磁体中，材料缺陷(材料空穴)对磁化强度的磁弹性转换引起的转换误差的影响。我们发现，在缺陷的存在下，误差概率显著增加，这表明磁弹性开关特别容易受到材料缺陷的影响。奇怪的是，在无缺陷和有缺陷的纳米磁体中，都存在一个给出最低错误概率的临界应力值。缺陷纳米磁体的临界应力比无缺陷纳米磁体的临界应力大得多。由于在小的纳米磁体中产生临界应力比在大的纳米磁体中产生临界应力更困难(在热稳定性方面具有相同的能量势垒)，因此在存储器和其他需要可靠切换的应用中缩小磁弹性开关纳米磁体的规模将是一个挑战。缺陷的存在可能会进一步加剧这一点。
We theoretically study the effect of a material defect (material void) on switching errors associated with magneto-elastic switching of magnetization in elliptical magnetostrictive nanomagnets having in-plane magnetic anisotropy. We find that the error probability increases significantly in the presence of the defect, indicating that magneto-elastic switching is particularly vulnerable to material imperfections. Curiously, there is a critical stress value that gives the lowest error probability in both defect-free and defective nanomagnets. The critical stress is much higher in defective nanomagnets than in defect-free ones. Since it is more difficult to generate the critical stress in small nanomagnets than in large nanomagnets (having the same energy barrier for thermal stability), it would be a challenge to downscale magneto-elastically switched nanomagnets in memory and other applications where reliable switching is required. This is likely to be further exacerbated by the presence of defects.