The Influence of Black Silicon Morphology Modification by Acid Etching to the Properties of Diamond Wire Sawn Multicrystalline Silicon Solar Cells

The Influence of Black Silicon Morphology Modification by Acid Etching to the Properties of Diamond Wire Sawn Multicrystalline Silicon Solar Cells
复制标题

酸蚀黑硅形貌改性对金刚线锯多晶硅太阳能电池性能的影响

DOI:
10.1109/jphotov.2018.2829085
复制
发表时间:
2018
影响因子:
3
通讯作者:
Liu Xinyu
Liu Xinyu
中科院分区:
工程技术3区
文献类型:
--
作者:
Su Guoyu;Jia Rui;Dai Xiaowan;Tao Ke;Sun Hengchao;Jin Zhi;Liu Xinyu

文献摘要

被引文献

相似文献

具有纳米织构的黑硅由于其低反射率而对金刚石线锯(DWS)多晶硅(mc-Si)太阳电池具有重要意义。通常,纳米级织构可以通过金属辅助化学蚀刻(MACE)在DWS mc-Si晶片上获得。在此,我们发现,为了提高具有纳米织构的DWS多晶硅太阳电池的转换效率,必须通过酸腐蚀来改变织构的形貌。酸蚀刻是缺陷去除蚀刻工艺。实验结果表明,酸蚀工艺不仅影响纳米织构的尺寸和反射率,而且还影响硅片的复合速度。通过MACE和适当的酸腐蚀工艺,成功地制备了具有纳米织构的DWS多晶硅太阳电池,其反射率低于常规酸织构制备的DWS多晶硅太阳电池。与常规酸织构化制备的DWS mc-Si太阳能电池相比,DWS mc-Si太阳能电池(15.6cm × 15.6cm)的最高转换效率达到19.07%,转换效率提高了0.6%。
Black silicon with nanosized textures is very important to the diamond wire sawn (DWS) multicrystalline silicon (mc-Si) solar cell due to its low reflectivity. Normally the nanosized textures can be obtained by metal-assisted chemical etching (MACE) on the DWS mc-Si wafers. Here, we found that in order to improve the conversion efficiency of DWS mc-Si solar cell with nanosized textures, the textures’ morphologies must be modified by acid etching. The acid etching is the defect removal etching process. Our experimental results showed that the acid etching process influences not only the size and the reflectivity of the nanosized textures, but also the recombination velocities of the silicon wafers. A DWS mc-Si solar cell with modified nanosized textures was successfully obtained by MACE and suitable acid etching process, whose reflectivity is lower than that of a DWS mc-Si solar cell prepared by conventional acidic texturizing. The highest conversion efficiency of 19.07% was reached and a 0.6% conversion efficiency gain was obtained for a DWS mc-Si solar cell (15.6 cm × 15.6 cm), as opposed to the DWS mc-Si solar cell prepared by conventional acidic texturizing.