Recent advancements in IGCT technologies for high power electronics applications
Recent advancements in IGCT technologies for high power electronics applications
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高功率电子应用 IGCT 技术的最新进展
DOI：
10.1109/epe.2015.7311740
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
T. Stiasny
中科院分区：
文献类型：
--
作者：
U. Vemulapati;Munaf T. A. Rahimo;M. Arnold;T. Wikstrom;J. Vobecký;B. Backlund;T. Stiasny
在本文中，我们回顾了最近为高功率电子应用进一步开发集成门极换流晶闸管 (IGCT) 器件概念所取得的进展。讨论了各种新引入的 IGCT 技术，并介绍了最新的原型实验结果以及 IGCT 技术的新颖结构和未来趋势。这将为系统设计人员提供该设备概念可能的潜力的全面概述。
In this paper, we review the progress made recently for further developing the Integrated Gate Commutated Thyristor (IGCT) device concept for high power electronics applications. A wide range of newly introduced IGCT technologies are discussed and recent prototype experimental results as well as novel structures and future trends of the IGCT technology are presented. This will provide system designers with a comprehensive overview of the potentials possible with this device concept.