Rapid thermal annealing procedure for densification of sol-gel indium tin oxide thin films
Rapid thermal annealing procedure for densification of sol-gel indium tin oxide thin films
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DOI：
10.1016/s1463-0184(02)00028-x
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发表时间：
2002-09-01
期刊：
影响因子：
--
通讯作者：
Bessaïs, B
中科院分区：
文献类型：
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作者：
Daoudi, K;Sandu, CS;Bessaïs, B
在这项工作中，我们报告的兴趣，快速热退火（RTA）的溶胶-凝胶（SG）氧化铟锡（ITO）薄膜的致密化。这些ITO薄膜的晶体结构进行了可视化的透射电子显微镜（TEM）和相应的电子衍射图案进行了比较，从纯In 2 O3的数据。从TEM显微照片测量的平均晶粒尺寸范围为5至50 nm。膜致密化之后，卢瑟福背散射光谱加上横截面TEM观察。与经典退火的比较进行了讨论。(C)2003年由Elsevier Science Ltd.出版
In this work, we report on the interest of the rapid thermal annealing (RTA) for densification of sol-gel (SG) indium tin oxide (ITO) thin films. The crystalline structure of these ITO films was visualized by transmission electron microscopy (TEM) and corresponding electron diffraction pattern were compared with data from pure In2O3. The average grain size, measured from TEM micrographs, ranges from 5 to 50 nm. The film densification was followed by Rutherford backscattering spectrometry coupled with cross-section TEM observations. A comparison with classical annealing is discussed. (C) 2003 Published by Elsevier Science Ltd.