Controlling the Polarity of Silicon Nanowire Transistors
Controlling the Polarity of Silicon Nanowire Transistors
复制标题
控制硅纳米线晶体管的极性
DOI：
10.1126/science.1238630
复制
发表时间：
2013
期刊：
影响因子：
56.9
通讯作者：
T. Ernst
中科院分区：
文献类型：
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作者：
T. Ernst
额外的电极允许在硅纳米线3D晶体管中选择电荷载流子类型，并创建高度紧凑的逻辑门。每一代集成电路（IC）技术都带来了新的应用。最新的进展使非侵入性手术、三维（3D）游戏和电影以及智能汽车成为可能，仅举几例。单个芯片可以包含超过10亿个基本器件，而这种复杂性的增加是通过制造用作开关或存储器的纳米级晶体管来实现的。De Marchi等人（1）最近的实验工作描述了通过控制垂直堆叠的硅（Si）纳米线晶体管（见图，面板A和B）中发生的导电类型来改变IC最基本的砖块之一的结构，从而制造出可编程晶体管。
Additional electrodes allow for the selection of the charge-carrier type in silicon nanowire 3D transistors and the creation of highly compact logic gates. Each generation of integrated circuit (IC) technology has led to new applications. The most recent advances have enabled noninvasive surgery, three-dimensional (3D) games and movies, and intelligent cars, to name a few. A single chip can contain more than 1 billon elementary devices, and this gain in complexity has been achieved by fabricating nanometer-scale transistors used as switches or memories. Recent experimental work by De Marchi et al. (1) describes changes to the structure of one of the most basic bricks of ICs by controlling the type of conduction occurring in vertically stacked silicon (Si) nanowire transistors (see the figure, panels A and B), thus making a programmable transistor.