A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors
A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors
复制标题
DOI：
10.1002/adma.201004317
复制
发表时间：
2011-03-01
影响因子：
29.4
通讯作者：
Yang, Guo Zhen
中科院分区：
文献类型：
--
作者：
Jiang, An Quan;Wang, Can;Yang, Guo Zhen
报道了一种由导电BiFeO_3外延薄膜构成的铁电-电阻随机存储器，其单极二极管电流由电极化取向调制。该器件具有持续数月的存储器，足够高的导通电流和开/关比，以允许普通的读出放大器测量“1”或“0”，并且与互补金属氧化物半导体处理完全兼容。
A ferroelectric-resistive random access memory consisting of a conductive BiFeO3 epitaxial thin film with a unipolar diode current modulated by electric polarization orientation is reported. This device has a memory that lasts for months, a sufficiently high on current and on/ off ratio to permit ordinary sense amplifiers to measure "1" or " 0", and is fully compatible with complementary metal- oxide semiconductor processing.