Difference in space‐charge recombination of proton and electron irradiated GaAs solar cells
Difference in space‐charge recombination of proton and electron irradiated GaAs solar cells
复制标题
质子和电子辐照砷化镓太阳能电池空间电荷复合的差异
DOI：
10.1002/pip.3100
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
C. Zimmermann
中科院分区：
文献类型：
--
作者：
C. Pellegrino;A. Gagliardi;C. Zimmermann
GaAs组件电池，在Ga 0.5In 0.5P/GaAs/Ge三结太阳能电池中的中间电池的代表，用各种能量和注量的质子和电子辐照。从测得的暗J-V曲线计算的局部理想因子表现出辐射粒子的特征签名。借助基于Shockley-Read-Hall统计的分析模型，计算了空间电荷区的复合电流，精确地再现了局域二极管理想因子。带隙中远离本征费米能级的缺陷能级被发现是必不可少的，因为经典的双二极管模型无法描述实验数据。根据辐照GaAs中已知缺陷能级的文献数据，导出了相关的寿命和缺陷引入率。
GaAs component cells, representative of the middle cell in Ga0.5In0.5P/GaAs/Ge triple junction solar cells, were irradiated with protons and electrons of various energies and fluences. The local ideality factor, calculated from the measured dark J‐V curves, exhibits a characteristic signature of the irradiating particle. With the help of an analytical model based on Shockley‐Read‐Hall statistics, the recombination current in the space‐charge region is calculated, and the local diode ideality factor is reproduced accurately. The inclusion of defect levels away from the intrinsic Fermi level in the bandgap is found to be essential, since a classical two‐diode model fails to describe the experimental data. On the basis of literature data of known defect levels in irradiated GaAs, the associated lifetimes and defect introduction rates are derived.