Phase Separation and Bulk p-n Transition in Single Crystals of Bi2Te2Se Topological Insulator
Phase Separation and Bulk p-n Transition in Single Crystals of Bi2Te2Se Topological Insulator
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DOI：
10.1002/adma.201203542
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发表时间：
2013-02-13
影响因子：
29.4
通讯作者：
Iversen, Bo B.
中科院分区：
文献类型：
--
作者：
Mi, Jian-Li;Bremholm, Martin;Iversen, Bo B.
在Bi2Te2Se晶棒的生长轴上发现了有序相和无序相的分离。在II相中发现了较高的体电阻率，这是研究表面态输运性质的理想候选者。II相的大块绝缘特性是由不同类型缺陷的相反作用引起的。
Separation of ordered and disordered phases is found along the growth axis of a Bi2Te2Se crystal rod. A high bulk resistivity is found in phase II, which is an ideal candidate for investigation of the transport properties of the surface states. The bulk insulating feature of phase II is caused by the opposing effects of different types of defects.