Electrically pumped continuous-wave III-V quantum dot lasers on silicon
Electrically pumped continuous-wave III-V quantum dot lasers on silicon
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DOI：
10.1038/nphoton.2016.21
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发表时间：
2016-05-01
期刊：
影响因子：
35
通讯作者：
Liu, Huiyun
中科院分区：
文献类型：
--
作者：
Chen, Siming;Li, Wei;Liu, Huiyun
可靠、高效的电泵浦硅基激光器将实现光子和电子电路的完全集成，但以前只能通过晶片键合实现。在这里，我们展示了直接生长在硅衬底上的连续波InAs/GaAs量子点激光器，其阈值电流密度为62.5 A cm（-2），室温输出功率超过105 mW，工作温度高达120 ℃。已收集了超过3，100小时的连续波运行数据，外推平均故障时间超过100，158小时。在硅上实现高性能量子点激光器是由于通过将成核层和位错过滤层与原位热退火相结合，在III-V外延层中实现了105 cm（-2）量级的低密度穿透位错。这些结果是可靠和具有成本效益的硅基光电集成的重大进展。
Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate continuous-wave InAs/GaAs quantum dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 A cm(-2), a room-temperature output power exceeding 105 mW and operation up to 120 degrees C. Over 3,100 h of continuous-wave operating data have been collected, giving an extrapolated mean time to failure of over 100,158 h. The realization of high-performance quantum dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 105 cm(-2) in the III-V epilayers by combining a nucleation layer and dislocation filter layers with in situ thermal annealing. These results are a major advance towards reliable and cost-effective silicon-based photonic-electronic integration.