Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
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DOI：
10.1016/j.mee.2016.03.038
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发表时间：
2016-08-01
影响因子：
2.3
通讯作者：
de Groot, C. H.
中科院分区：
文献类型：
--
作者：
Huang, Ruomeng;Sun, Kai;de Groot, C. H.
在等离子体增强原子层沉积工艺中，通过调节O2等离子体时间，获得了电学性能可调的未掺杂ZnO薄膜。沉积的ZnO薄膜的结构，成分和电性能进行了研究，通过各种表征技术。通过调整等离子体曝光从2到8秒，所得ZnO薄膜的折射率和载流子浓度可以调制高达3个数量级。选择ZnO薄膜，等离子体曝光时间为6 s，实现了TiN/ZnO/TiN免成型电阻存储器件。这种沉积方法为在一次沉积中制备具有可调性能的其他未掺杂金属氧化物以及复杂的多层结构提供了巨大的潜力。(C)2016爱思唯尔B. V.保留所有权利。
Undoped ZnO thin films with tunable electrical properties have been achieved by adjusting the 02 plasma time in the plasma enhanced atomic layer deposition process. The structural, compositional and electrical properties of the deposited ZnO films were investigated by various characterization techniques. By tuning the plasma exposure from 2 to 8 s, both resistivities and carrier concentrations of the resultant ZnO films can be modulated by up to 3 orders of magnitude. Forming-free TiN/ZnO/TiN resistive memory devices have been achieved by choosing the ZnO film with the plasma exposure time of 6 s. This deposition method offers a great potential for producing other un-doped metal oxides with tunable properties as well as complex multilayer structures in a single deposition. (C) 2016 Elsevier B.V. All rights reserved.