Fano line shape and anti-crossing of Raman active E2g peaks in the charge density wave state of NbSe2
Fano line shape and anti-crossing of Raman active E2g peaks in the charge density wave state of NbSe2
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NbSe2 电荷密度波态拉曼活性 E2g 峰的法诺线形及反交叉
DOI：
10.1016/j.jpcs.2010.10.044
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发表时间：
2011
影响因子：
4
通讯作者：
A. Mialitsin
中科院分区：
文献类型：
--
作者：
A. Mialitsin
本文研究了2H多型单晶NbSe_2在正常相（N）、无公度电荷密度波（ICDW）和超导相（SC）ab面的低能拉曼散射。在647 nm激发波长下，得到了偏振分辨拉曼响应的温度依赖关系，并拟合了E2 g和A1 g对称通道的唯象模型。A1g响应可以用叠加在连续背景上的简单阻尼振子峰来拟合。E2g响应显示了层间声子和CDW诱导模式之间的反共振干涉图案，因此建模需要杂化配置（Fano线形[1]）。的偏振特定的峰值最大值的位置和线宽作为温度的函数，推导出以这种方式，提出。在A1 g对称通道中，拉曼位移范围达到110 cm − 1，在E2 g对称通道中超过300 cm − 1，电子连续谱散射的部分抑制表明远离费米表面的高能电子态参与了ICDW的形成。
Low energy Raman scattering from the ab-plane of the 2H polytype single crystal NbSe2has been investigated in the normal (N), incommensurate charge density wave (ICDW) and superconducting (SC) phases. The temperature dependence of the polarization resolved Raman response has been obtained for the excitation wavelength of 647nm and fitted to phenomenological models for the E2gand A1gsymmetry channels. The A1gresponse can be fitted by a simple damped oscillator peak superimposed on continuous background. The E2gresponse displays an anti-resonance interference pattern between the inter-layer phonon and the CDW-induced mode such that a hybridized configuration (Fano line shape [1]) is required for modelling. The polarization specific peak maxima positions and line widths as a function of temperature, deduced in this manner, are presented. Partial suppression of the electronic continuum scattering in the Raman shift range up to 110cm−1in the A1gsymmetry channel and beyond 300cm−1in the E2gsymmetry channel is indicative of high energy electronic states far away from the Fermi surface participating in the ICDW formation.
影响因子：
19.6
作者：
Kiss, T.;Yokoya, T.;Takagi, H.
通讯作者：
Takagi, H.