Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics
Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect transistors with HfO2 gate dielectrics
复制标题
HfO2栅介质金属氧化物半导体场效应晶体管氧化物陷阱耦合效应实验研究
DOI：
10.1063/1.4885394
复制
发表时间：
2014-06-30
影响因子：
4
通讯作者：
Huang, Ru
中科院分区：
文献类型：
--
作者：
Ren, Pengpeng;Wang, Runsheng;Huang, Ru
In this Letter, the coupling effect between multi-traps in HfO2 gate dielectrics is experimentally studied in scaled high-kappa/metal-gate metal oxide semiconductor field effect transistors (MOSFETs). Deviated from conventional understanding, mechanism that affects trap coupling is found, which is originated from local carrier density perturbation due to random dopant fluctuation (RDF) in the channel. The competition of conventional Coulomb repulsion effect and RDF induced local carrier density perturbation effect results in the nonmonotonic voltage dependence of trap coupling intensity. (C) 2014 AIP Publishing LLC.
