Lattice expansion of Ca and Ar ion implanted GaN
Lattice expansion of Ca and Ar ion implanted GaN
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DOI：
10.1063/1.120059
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发表时间：
1997-10-20
影响因子：
4
通讯作者：
Rauschenbach, B
中科院分区：
文献类型：
--
作者：
Liu, C;Mensching, B;Rauschenbach, B
在液氮温度下，将180keV的Ca+和Ar+离子均匀注入到GaN中。用高分辨X射线衍射仪测量了GaN(0002)峰在5×10(12)~1×10(16)cm(-2)剂量范围内的变化。结果表明，随着剂量的增加，GaN(0002)峰旁边的一个新峰出现、长大、逐渐缩小直至消失，非晶峰的出现伴随着向小角度移动。讨论了Ca+离子注入和Ar+离子注入的区别。这种现象是由Ca+和Ar+注入引起的GaN晶格膨胀引起的，并得到了透射电子显微镜的证实。(C)1997年美国物理研究所。
The 180 keV Ca+ and Ar+ ions were homogeneously implanted in GaN at temperature of liquid nitrogen. High resolution x-ray diffraction was used to monitor the change of GaN (0002) peak with the dose ranging from 5 x 10(12) to 1 x 10(16) cm(-2). It has been found that with increasing dose a new peak beside the GaN (0002) peak appears, grows up, and gradually shrinks until disappearance with arising of the amorphous peak, accompanied with a shift towards smaller angles. The difference between Ca+ and Ar+ implantation is discussed. Expansion of GaN crystal lattice due to Ca+ and Ar+ implantation accounts for this phenomenon and is confirmed by TEM results. (C) 1997 American Institute of Physics.