High magnetoresistance in ultra-thin two-dimensional Cr-based MXenes
High magnetoresistance in ultra-thin two-dimensional Cr-based MXenes
复制标题
超薄二维铬基 MXene 中的高磁阻
DOI：
10.1039/c8nr04978e
复制
发表时间：
2018
期刊：
影响因子：
6.7
通讯作者：
Liang Chen
中科院分区：
文献类型：
--
作者：
Jianhui Yang;Shaozheng Zhang;Anping Wang;Ruining Wang;Chuan Kui Wang;Guang Ping Zhang;Liang Chen
开发有效的磁阻器件由于其在诸如数据存储的电子学中的广泛应用而变得有益。一个挑战是在保持高磁阻的同时减小器件的规模。磁阻器件应用的另一个挑战涉及将它们与稳定的界面合成。反铁磁Cr基MXenes类似于隧道磁阻结，并且可以以简单的方式合成。密度泛函理论计算表明，Au电极与Cr基MXene之间的介质粘附强度可以保证稳定界面的形成。发现不同原子层中Cr原子之间的交换耦合随着厚度的增加而降低至0.4 meV。结果表明，Cr基MXenes具有高的磁电阻值和超薄层（约1 nm），并通过厚度控制表现出Cr原子之间可调的交换耦合，是一种很有前途的磁电阻器件。
Developing effective magnetoresistance devices has become beneficial due to their extensive applications in electronics such as data storage. One challenge is to reduce the scale of devices while maintaining a high magnetoresistance. Another challenge for the applications of magnetoresistance devices involves synthesizing them with stable interfaces. Antiferromagnetic Cr-based MXenes are similar to tunneling magnetoresistance junctions, and can be synthesized in a straightforward manner. Density functional theory calculations show that the medium adhesion strength between Au electrodes and Cr-based MXene can ensure the formation of stable interfaces. Exchange coupling between Cr atoms in different atomic layers is found to decrease to 0.4 meV with increasing thickness. Magnetoresistance values are higher than 400% with 1.0 V. The results show that Cr-based MXenes are promising magnetoresistance devices with high magnetoresistance values and ultra-thin layers (about 1 nm) and exhibit tunable exchange coupling between Cr atoms through thickness control.