Interface energy of Au7Si grown in the interfacial layer of truncated hexagonal dipyramidal Au nanoislands on polycrystalline-silicon
Interface energy of Au7Si grown in the interfacial layer of truncated hexagonal dipyramidal Au nanoislands on polycrystalline-silicon
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多晶硅上截角六角锥体金纳米岛界面层中生长的 Au7Si 的界面能
DOI：
10.1063/1.1586997
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
L. C. Chen
中科院分区：
文献类型：
--
作者：
J. S. Wu;Yang;S. Dhara;C. Wu;K. H. Chen;L. C. Chen
报道了通过在氧和氮环境中在1030 °C下退火Au/非晶Si/结晶Si来生长截顶六方双锥Au纳米岛。 在Au与多晶Si的界面处，观察到由非晶Si转变而来的Au 7 Si亚稳硅化金相。作为杂质的氧抑制了界面处Si的外扩散，从而控制了Au 7Si的贫Si亚稳相在扩散限制生长过程中的生长。通过对Au和Au 7 Si岛状结构的接触角测量，得到Au 7 Si（0.623-0.672 N/m）和Au-Au 7 Si（1.438-1.471 N/m）的界面能。
Growth of truncated hexagonal dipyramidal Au nanoislands is reported by annealing Au/amorphous-Si/crystalline-Si at 1030 °C in oxygen and nitrogen ambient. Metastable gold silicide phase of Au7Si is observed to form at the interface of Au and polycrystalline Si, which was transformed from amorphous Si. Oxygen, acting as an impurity, inhibits outdiffusion of Si at the interface and thus controls the growth of Si deficient metastable phase of Au7Si in a diffusion-limited growth process. Interface energies of Au7Si (0.623–0.672 N/m) and Au–Au7Si (1.438–1.471 N/m) are derived from the contact angle measurements of the island structure involving Au and Au7Si.