Molecular beam epitaxy of free-standing bulk wurtzite Al x Ga 1-x N layers using a highly efficient RF plasma source
Molecular beam epitaxy of free-standing bulk wurtzite Al x Ga 1-x N layers using a highly efficient RF plasma source
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使用高效 RF 等离子体源对独立式块体纤锌矿 Al x Ga 1-x N 层进行分子束外延
DOI：
10.1002/pssc.201510166
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Novikov S
中科院分区：
文献类型：
--
作者：
Novikov S
III 族氮化物的最新发展表明 AlxGa1-xN 基 LED 可以成为商业上可行的新替代深紫外光源。由于 GaN 和 AlN 的晶格参数存在显着差异，对于紫外器件应用，AlxGa1-xN 衬底比 GaN 或 AlN 衬底更可取。我们使用新型射频等离子体源，通过等离子体辅助分子束外延 (PA-MBE) 研究了自支撑纤锌矿 AlxGa1-xN 块状晶体的生长。通过 PA-MBE 在 2 英寸 GaAs (111)B 衬底上生长厚的纤锌矿 AlxGa1-xN 薄膜，并在生长后从 GaAs 衬底上去除，以提供独立的 AlxGa1-xN 样品。 AlxGa1-xN 的生长速率已被证明高达 3 µm/h。我们的新型高效射频等离子体源使我们能够在一天的生长中实现独立式块状 AlxGa1-xN 层，这使得我们的 MBE 块状生长技术具有商业可行性。
Recent developments with group III nitrides suggest AlxGa1‐xN based LEDs can be new alternative commercially viable deep ultra‐violet light sources. Due to a significant difference in the lattice parameters of GaN and AlN, AlxGa1‐xN substrates would be preferable to either GaN or AlN for ultraviolet device applications. We have studied the growth of free‐standing wurtzite AlxGa1‐xN bulk crystals by plasma‐assisted molecular beam epitaxy (PA‐MBE) using a novel RF plasma source. Thick wurtzite AlxGa1‐xN films were grown by PA‐MBE on 2‐inch GaAs (111)B substrates and were removed from the GaAs substrate after growth to provide free standing AlxGa1‐xN samples. Growth rates of AlxGa1‐xN up to 3 µm/h have been demonstrated. Our novel high efficiency RF plasma source allowed us to achieve free‐standing bulk AlxGa1‐xN layers in a single day's growth, which makes our MBE bulk growth technique commercially viable.