Fully Integrated 300 GHz Receiver S-MMICs in 50 nm Metamorphic HEMT Technology
Fully Integrated 300 GHz Receiver S-MMICs in 50 nm Metamorphic HEMT Technology
复制标题
采用 50 nm 变质 HEMT 技术的完全集成 300 GHz 接收器 S-MMIC
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
A. Leuther
中科院分区：
文献类型：
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作者：
A. Tessmann;H. Massler;U. Lewark;S. Wagner;I. Kallfass;A. Leuther
基于50 nm变形高电子迁移率晶体管（mHEMT）技术，研制了两种H波段（220-325 GHz）亚毫米波单片集成电路（S-MMIC）外差接收机。制作的基波下变频接收机在270 ~ 310 GHz频率范围内，本振功率仅为12 dBm，变频增益大于11 dB。此外，还研制了一种次谐波接收机S-MMIC，它由三倍频有源电路、两级驱动放大器、单端电阻混频器和四级低噪声放大器组成，在290 ~ 320 GHz频率范围内，次谐波本振功率为8 dBm，转换增益大于12 dB。接地共面波导（GCPW）拓扑结构与共源共栅晶体管相结合，使芯片尺寸非常紧凑，小于1.25 mm^2。
Two fully integrated H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) heterodyne receivers have been successfully developed, based on a 50 nm metamorphic high electron mobility transistor (mHEMT) technology. A fabricated fundamental down-conversion receiver achieved a conversion gain of more than 11 dB in the frequency range from 270 to 310 GHz with an LO power of only 12 dBm. Furthermore, a subharmonic receiver S-MMIC was developed, consisting of an active frequency multiplier by three, a two stage driver amplifier, a single-ended resistive mixer, and a four-stage low-noise amplifier, demonstrating a conversion gain of more than 12 dB from 290 to 320 GHz with a subharmonic LO-power of 8 dBm. Grounded coplanar waveguide (GCPW) topology in combination with cascode transistors resulted in a very compact die size of less than 1.25 mm^2.