AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator
AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator
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DOI：
10.1143/jjap.42.2278
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发表时间：
2003-04
影响因子：
1.5
通讯作者：
M. Ochiai;M. Akita;Y. Ohno;S. Kishimoto;K. Maezawa;T. Mizutani
中科院分区：
文献类型：
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作者：
M. Ochiai;M. Akita;Y. Ohno;S. Kishimoto;K. Maezawa;T. Mizutani
AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using Si3N4 film as a gate insulator have been successfully fabricated. The gate leakage current decreased by about three orders of magnitude compared to that of the conventional AlGaN/GaN HEMTs without the Si3N4 gate insulator. The low-frequency noise of the MIS-HEMTs was smaller than that of the conventional HEMTs. Current collapse has also been suppressed in the MIS-HEMTs.
