Comparison of fabrication approaches for selectively oxidized VCSEL arrays
Comparison of fabrication approaches for selectively oxidized VCSEL arrays
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选择性氧化 VCSEL 阵列制造方法的比较
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
J. J. Hindi
中科院分区：
文献类型：
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作者：
K. Geib;K. Choquette;A. Allerman;R. D. Briggs;J. J. Hindi
横向氧化 VCSEL 令人印象深刻的性能改进是以二维阵列制造复杂性增加为代价的。由于必须暴露要进行湿热氧化的外延层，因此非平面性可能是一个问题。这一点尤其重要，因为必须将二极管阳极和阴极的电接触引出到封装中。我们研究了适合制造二维 VCSEL 阵列的四种制造顺序。这些技术包括：台面蚀刻聚合物平坦化、台面蚀刻桥接触、台面蚀刻氧化物隔离（其中电迹线在氧化过程中与衬底隔离）以及氧化物/植入物隔离（通过小通孔氧化），所有这些技术都使 VCSEL 具有出色的性能。这些制造工艺的适用性是根据氧化均匀性、器件电容和封装结构的坚固性进行评估的。
The impressive performance improvements of laterally oxidized VCSELs come at the expense of increased fabrication complexity for 2-dimensional arrays. Since the epitaxial layers to be wet-thermally oxidized must be exposed, non-planarity can be an issue. This is particularly important in that electrical contact to both the anode and cathode of the diode must be brought out to a package. We have investigated four fabrication sequences suitable for the fabrication of 2- dimensional VCSEL arrays. These techniques include: mesa etched polymer planarized, mesa etched bridge contacted, mesa etched oxide isolated (where the electrical trace is isolated from the substrate during the oxidation) and oxide/implant isolation (oxidation through small via holes) all of which result in VCSELs with outstanding performance. The suitability of these processes for manufacturing are assessed relative to oxidation uniformity, device capacitance, and structural ruggedness for packaging.