High-performance field-effect transistor based on dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene, an easily synthesized semiconductor with high ionization potential
High-performance field-effect transistor based on dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene, an easily synthesized semiconductor with high ionization potential
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DOI：
10.1002/adma.200701167
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发表时间：
2007-10-05
影响因子：
29.4
通讯作者：
Hu, Wenping
中科院分区：
文献类型：
--
作者：
Gao, Jianhua;Li, Rongjin;Hu, Wenping
合成标题并五苯类似物DBTDT只需三个简单的受控步骤（见图）。该材料具有高电离势、高热和光稳定性、高迁移率以及在衬底温度约为100 ℃时大于106的开/关比。36摄氏度，如这里所报道的，表明DBTDT对于塑料有机电子产品的应用将是非常有价值的。
Three simple, controlled steps are all it takes to synthesize the title pentacene analogue DBTDT (see figure). The material's high ionization potential, high thermal and photostability, high mobilities, and an on/off ratio larger than 106 at a substrate temperature of ca. 36 degrees C, as reported here, suggest that DBTDT will be extremely valuable for applications in plastic organic electronics.