Nonequilibrium Magnetic Domain Structures as a Function of Speed of Switching Process in Ni $_{80}$Fe$_{20}$ Thin-Film Element
Nonequilibrium Magnetic Domain Structures as a Function of Speed of Switching Process in Ni $_{80}$Fe$_{20}$ Thin-Film Element
复制标题
DOI：
10.1109/tmag.2006.886845
复制
发表时间：
2007
影响因子：
2.1
通讯作者：
B. Choi;J. Rudge;M. R. Freeman;Y. Hong;Q. Xiao
中科院分区：
文献类型：
--
作者：
B. Choi;J. Rudge;M. R. Freeman;Y. Hong;Q. Xiao
采用时间分辨扫描克尔显微镜和数值模拟方法，研究了大角度旋转过程中开关速度对磁性薄膜元件非平衡畴结构的影响。特别是，研究了Ni80Fe20小元件向逐渐加快的开关场反转的时空性质的系统演变。一般来说，在短磁场脉冲的激励下，磁性元件在非平衡状态下的磁化演变为复杂的畴结构。非平衡域结构的复杂程度是切换过程速度的一个强函数
The influence of the speed of the switching process on the nonequilibrium domain structures in magnetic thin-film elements undergoing large angle rotations was studied with time-resolved scanning Kerr microscopy and numerical modelings. In particular, the systematic evolution of the spatiotemporal nature of the reversal of a small Ni80Fe20 element to progressively faster switching fields has been investigated. Generally, the magnetization evolves into a complex domain structure in nonequilibrium state when a magnetic element is excited by applying a short magnetic field pulse. The degree of complexity of the nonequilibrium domain structure is found to be a strong function of the speed of the switching process