Determination of photoluminescence mechanism in InGaN quantum wells
Determination of photoluminescence mechanism in InGaN quantum wells
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DOI：
10.1063/1.124977
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发表时间：
1999-10-11
影响因子：
4
通讯作者：
Aoyagi, Y
中科院分区：
文献类型：
--
作者：
Riblet, P;Hirayama, H;Aoyagi, Y
我们报告了一组 In0.25Ga0.75N 量子阱中光致发光机制的明确实验测定。我们没有研究不同 In 含量的光致发光，而是结合对 GaN 量子阱进行的类似研究，将其作为量子阱宽度的函数进行研究。通过这种方式，我们表明光致发光不是来自量子点或量子阱中非常局域的状态，而是来自量子阱本身在应变引起的压电场的影响下。因此可以解释先前报道的异常光致发光位移和温度依赖性。 (C) 1999 年美国物理研究所。 [S0003-6951(99)00241-7]。
We report on the unambiguous experimental determination of the photoluminescence mechanism in a set of In0.25Ga0.75N quantum wells. Instead of studying the photoluminescence for different In contents, we have investigated it as a function of the quantum well width in combination with a similar study performed on GaN quantum wells. In this way, we show that the photoluminescence is not coming from quantum dots or very localized states in the quantum well, but from the quantum well itself under the influence of a piezoelectric field induced by strain. The previously reported abnormal photoluminescence shifts and temperature dependencies can thus be explained. (C) 1999 American Institute of Physics. [S0003-6951(99)00241-7].