Wavelength extension beyond 1.5μm in symmetric InAs quantum dots grown on InP(111)A using droplet epitaxy
Wavelength extension beyond 1.5μm in symmetric InAs quantum dots grown on InP(111)A using droplet epitaxy
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DOI：
10.7567/apex.9.101201
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发表时间：
2016-10-01
影响因子：
2.3
通讯作者：
Kuroda, Takashi
中科院分区：
文献类型：
--
作者：
Ha, Neul;Mano, Takaaki;Kuroda, Takashi
通过使用C-3v对称（111）表面作为生长衬底，我们可以在自组装量子点中实现高度的结构对称性，这适合于用作量子纠缠光子发射器。在这里，我们报告的InP（111）A上的InAs点的波长可控性，我们实现了通过调整的三元合金成分的In（Al，Ga）As的障碍，晶格匹配的InP。我们改变了系统的峰值发射波长从1.3至1.7 μ m的势垒带隙调谐。所观察到的光谱位移同意数值模拟的结果，假设一个测量的形状分布独立的障碍的选择。(C)2016日本应用物理学会
By using a C-3v symmetric (111) surface as a growth substrate, we can achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled-photon emitters. Here, we report on the wavelength controllability of InAs dots on InP(111)A, which we realized by tuning the ternary alloy composition of In(Al, Ga) As barriers that were lattice-matched to InP. We changed the peak emission wavelength systematically from 1.3 to 1.7 mu m by barrier band gap tuning. The observed spectral shift agreed with the result of numerical simulations that assumed a measured shape distribution independent of the barrier choice. (C) 2016 The Japan Society of Applied Physics