Study on chemical solution deposition of aluminum-doped zinc oxide films
Study on chemical solution deposition of aluminum-doped zinc oxide films
复制标题
化学溶液沉积铝掺杂氧化锌薄膜的研究
DOI：
10.1016/j.jallcom.2010.06.083
复制
发表时间：
2010-09-03
影响因子：
6.2
通讯作者：
Dai, Songyuan
中科院分区：
文献类型：
--
作者：
Li, Gang;Zhu, Xuebin;Dai, Songyuan
采用化学溶液沉积法在n型（1 0 0）取向Si和玻片基底上制备了ZnO:Al薄膜。系统地研究了Al含量、空气退火温度、还原气氛退火温度和溶液浓度对结构、形貌、电学和光学特性的影响。结果表明，工艺参数对合金的显微组织和性能都有重要影响。通过优化工艺参数，获得了最低电阻率值（0.091 ω cm）。(C) 2010 Elsevier B.V.版权所有
ZnO:Al thin films were prepared on n-type (1 0 0)-oriented Si and glass slide substrates by chemical solution deposition method. The effects of Al content, the annealing temperature in air, the annealing temperature in reducing atmosphere and the solution concentration on the structural, morphological, electrical and optical characteristics have been investigated systematically. The results show that the processing parameters play an important role in the microstructures as well as the properties. The lowest resistivity value (0.091 Omega cm) was observed by optimization of the processing parameters. (C) 2010 Elsevier B.V. All rights reserved.