Electrical conductivity of metallic selenium, tellurium, and silicon under high pressure
Electrical conductivity of metallic selenium, tellurium, and silicon under high pressure
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金属硒、碲和硅在高压下的电导率
DOI：
10.1063/1.328081
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发表时间：
1980
影响因子：
3.2
通讯作者：
F. Bundy
中科院分区：
文献类型：
--
作者：
K. Dunn;F. Bundy
用低温钳形压力机研究了Se、Te和Si的压致金属态。分析了电阻与温度的关系曲线，并利用该曲线求出了特征温度ϑ。实验结果与金属电阻的Gruneisen-Bloch关系符合得很好。
The pressure induced metallic state of Se, Te, and Si has been studied using a cryogenic clamp press. The resistance versus temperature curves were analyzed and used for derivation of the characteristic temperature ϑ. Good agreement was obtained between the experimental results and the Gruneisen‐Bloch relation for the resistance of metals.